CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  250A

DETAILED DESCRIPTION:  MOSFET ARRAY 2 N-CHANNEL (HALF BRIDGE) 1200V (1.2KV) 250A 1100W CHASSIS MOUNT D3

DRAIN TO SOURCE VOLTAGE (VDSS):  1200V (1.2KV)

FET FEATURE:  STANDARD

FET TYPE:  2 N-CHANNEL (HALF BRIDGE)

GATE CHARGE (QG) (MAX) @ VGS:  490NC @ 20V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  9500PF @ 1000V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  APTMC120AM08CD3AG

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  D-3 MODULE

PACKAGING:  BULK PACK

POWER - MAX:  1100W

RDS ON (MAX) @ ID, VGS:  10 MOHM @ 200A, 20V

STANDARD PACKAGE:  100

SUPPLIER DEVICE PACKAGE:  D3

VGS(TH) (MAX) @ ID:  2.2V @ 10MA (TYP)