CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  80A

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  10 @ 5A, 5V

DETAILED DESCRIPTION:  RF TRANSISTOR NPN 65V 80A 1.03GHZ 3400W CHASSIS MOUNT 55SW

FREQUENCY - TRANSITION:  1.03GHZ

GAIN:  10DB ~ 10.5DB

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  ITC1100

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

OPERATING TEMPERATURE:  200°C (TJ)

PACKAGE / CASE:  55SW

PACKAGING:  BULK PACK

POWER - MAX:  3400W

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  55SW

TRANSISTOR TYPE:  NPN

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  65V