CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  800MA

CURRENT - COLLECTOR CUTOFF (MAX):  50NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 150MA, 10V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 50V 800MA 500MW SURFACE MOUNT

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  JAN2N2222AUB

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  3-SMD, NON-STANDARD

PACKAGING:  BULK PACK

POWER - MAX:  500MW

SERIES:  MILITARY, MIL-PRF-19500/255

STANDARD PACKAGE:  100

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  1V @ 50MA, 500MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V