CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  600MA

CURRENT - COLLECTOR CUTOFF (MAX):  1ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 150MA, 10V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 60V 600MA 800MW THROUGH HOLE TO-39

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  JAN2N2905A

MANUFACTURER STANDARD LEAD TIME:  23 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-205AD, TO-39-3 METAL CAN

PACKAGING:  BULK PACK

POWER - MAX:  800MW

SERIES:  MILITARY, MIL-PRF-19500/290

SUPPLIER DEVICE PACKAGE:  TO-39

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  1.6V @ 50MA, 500MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  60V