CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  1A

CURRENT - COLLECTOR CUTOFF (MAX):  2ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  40 @ 20MA, 10V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 350V 1A 800MW THROUGH HOLE TO-39 (TO-205AD)

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  JAN2N3439

MANUFACTURER STANDARD LEAD TIME:  22 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-205AD, TO-39-3 METAL CAN

PACKAGING:  BULK PACK

POWER - MAX:  800MW

SERIES:  MILITARY, MIL-PRF-19500/368

SUPPLIER DEVICE PACKAGE:  TO-39 (TO-205AD)

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  500MV @ 4MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  350V