CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR CUTOFF (MAX):  400NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  20 @ 100MA, 1V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI IRE DIVISION

MANUFACTURER PART NUMBER:  JAN2N4449

MANUFACTURER STANDARD LEAD TIME:  23 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-206AB, TO-46-3 METAL CAN

PACKAGING:  BULK PACK

POWER - MAX:  360MW

SERIES:  MILITARY, MIL-PRF-19500/317

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-46 (TO-206AB)

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  450MV @ 10MA, 100MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  20V