CAPACITANCE @ VR, F:  60PF @ 10V, 1MHZ

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  3A

CURRENT - REVERSE LEAKAGE @ VR:  5ΜA @ 100V

DIODE TYPE:  STANDARD

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI IRE DIVISION

MANUFACTURER PART NUMBER:  JANTX1N5809

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE - JUNCTION:  -65°C ~ 175°C

PACKAGE / CASE:  B, AXIAL

PACKAGING:  BULK PACK

REVERSE RECOVERY TIME (TRR):  30NS

SERIES:  MILITARY, MIL-PRF-19500/477

SPEED:  FAST RECOVERY =< 500NS, > 200MA (IO)

STANDARD PACKAGE:  1

VOLTAGE - DC REVERSE (VR) (MAX):  100V

VOLTAGE - FORWARD (VF) (MAX) @ IF:  875MV @ 4A