CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  500MA

CURRENT - COLLECTOR CUTOFF (MAX):  10ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 150MA, 10V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 100V 500MA 1W THROUGH HOLE TO-39 (TO-205AD)

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  JANTX2N3499

MANUFACTURER STANDARD LEAD TIME:  23 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-205AD, TO-39-3 METAL CAN

PACKAGING:  BULK PACK

POWER - MAX:  1W

SERIES:  MILITARY, MIL-PRF-19500/366

SUPPLIER DEVICE PACKAGE:  TO-39 (TO-205AD)

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  600MV @ 30MA, 300MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  100V