CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  18NC @ 10V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI IRE DIVISION

MANUFACTURER PART NUMBER:  JANTX2N6788

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-205AF METAL CAN

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  800MW (TC)

RDS ON (MAX) @ ID, VGS:  350 MOHM @ 6A, 10V

SERIES:  MILITARY, MIL-PRF-19500/555

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-39

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4V @ 250ΜA