CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  5.5A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  42.07NC @ 10V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI IRE DIVISION

MANUFACTURER PART NUMBER:  JANTX2N6798

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-205AF METAL CAN

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  800MW (TA), 25W (TC)

RDS ON (MAX) @ ID, VGS:  420 MOHM @ 5.5A, 10V

SERIES:  MILITARY, MIL-PRF-19500/557

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-205AF (TO-39)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4V @ 250ΜA