CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  800MA

CURRENT - COLLECTOR CUTOFF (MAX):  10ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 150MA, 10V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR ARRAY 4 NPN (QUAD) 50V 800MA 1.5W THROUGH HOLE TO-116

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  JANTX2N6989

MANUFACTURER STANDARD LEAD TIME:  23 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  14-DIP (0.300", 7.62MM)

PACKAGING:  BULK PACK

POWER - MAX:  1.5W

SERIES:  MILITARY, MIL-PRF-19500/559

SUPPLIER DEVICE PACKAGE:  TO-116

TRANSISTOR TYPE:  4 NPN (QUAD)

VCE SATURATION (MAX) @ IB, IC:  1V @ 50MA, 500MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V