CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  60A

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  20 @ 1A, 5V

DETAILED DESCRIPTION:  RF TRANSISTOR NPN 65V 60A 1.09GHZ 1458W CHASSIS MOUNT 55ST-1

FREQUENCY - TRANSITION:  1.09GHZ

GAIN:  8.6DB

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  MDS800

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

OPERATING TEMPERATURE:  200°C (TJ)

PACKAGE / CASE:  55ST-1

PACKAGING:  BULK PACK

POWER - MAX:  1458W

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  55ST-1

TRANSISTOR TYPE:  NPN

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  65V