CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  24A

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  10 @ 5A, 5V

DETAILED DESCRIPTION:  RF TRANSISTOR NPN 65V 24A 960MHZ ~ 1.215GHZ 940W CHASSIS MOUNT M216

FREQUENCY - TRANSITION:  960MHZ ~ 1.215GHZ

GAIN:  7DB

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  MS2210

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

OPERATING TEMPERATURE:  200°C (TJ)

PACKAGE / CASE:  M216

PACKAGING:  BULK PACK

POWER - MAX:  940W

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  M216

TRANSISTOR TYPE:  NPN

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  65V