ADDITIONAL FEATURE:  LOW NOISE

CASE CONNECTION:  SOURCE

CONFIGURATION:  SINGLE

DRAIN CURRENT-MAX (ABS) (ID):  60 MA

DRAIN CURRENT-MAX (ID):  60 MA

FET TECHNOLOGY:  HIGH ELECTRON MOBILITY

HIGHEST FREQUENCY BAND:  KU BAND

JESD-30 CODE:  X-XXMW-F4

MANUFACTURER:  MITSUBISHI ELECTRIC

MANUFACTURER PART NUMBER:  MGF4916G

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  DEPLETION MODE

OPERATING TEMPERATURE-MAX:  125 °C

PACKAGE BODY MATERIAL:  UNSPECIFIED

PACKAGE DESCRIPTION:  MICROWAVE, X-XXMW-F4

PACKAGE SHAPE:  UNSPECIFIED

PACKAGE STYLE:  MICROWAVE

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION AMBIENT-MAX:  50 MW

POWER GAIN-MIN (GP):  12 DB

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FORM:  FLAT

TERMINAL POSITION:  UNSPECIFIED

TRANSISTOR APPLICATION:  AMPLIFIER

TRANSISTOR ELEMENT MATERIAL:  GALLIUM ARSENIDE