CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  60 V

DRAIN CURRENT-MAX (ABS) (ID):  5 A

DRAIN CURRENT-MAX (ID):  5 A

DRAIN-SOURCE ON RESISTANCE-MAX:  400 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  100 PF

JEDEC-95 CODE:  TO-39

JESD-30 CODE:  O-MBCY-W3

JESD-609 CODE:  E0

MANUFACTURER:  MOTOROLA SEMICONDUCTOR PRODUCTS

MANUFACTURER PART NUMBER:  IRFF123

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  METAL

PACKAGE DESCRIPTION:  CYLINDRICAL, O-MBCY-W3

PACKAGE SHAPE:  ROUND

PACKAGE STYLE:  CYLINDRICAL

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION AMBIENT-MAX:  20 W

POWER DISSIPATION-MAX (ABS):  20 W

PULSED DRAIN CURRENT-MAX (IDM):  20 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  NO

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  WIRE

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-MAX (TOFF):  170 NS

TURN-ON TIME-MAX (TON):  110 NS