ADDITIONAL FEATURE:  AVALANCHE RATED

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  60 V

DRAIN CURRENT-MAX (ABS) (ID):  1.2 A

DRAIN CURRENT-MAX (ID):  1.2 A

DRAIN-SOURCE ON RESISTANCE-MAX:  300 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-261AA

JESD-30 CODE:  R-PDSO-G4

JESD-609 CODE:  E0

MANUFACTURER:  MOTOROLA SEMICONDUCTOR PRODUCTS

MANUFACTURER PART NUMBER:  MMFT2955ET1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION AMBIENT-MAX:  800 MW

POWER DISSIPATION-MAX (ABS):  800 MW

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON