ADDITIONAL FEATURE:  BUILT IN BIAS RESISTOR RATIO 1

COLLECTOR CURRENT-MAX (IC):  100 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  50 V

CONFIGURATION:  SINGLE WITH BUILT-IN RESISTOR

DC CURRENT GAIN-MIN (HFE):  35

JESD-30 CODE:  R-PDSO-G3

JESD-609 CODE:  E0

MANUFACTURER:  MOTOROLA SEMICONDUCTOR PRODUCTS

MANUFACTURER PART NUMBER:  MUN5211T1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  NPN

POWER DISSIPATION AMBIENT-MAX:  150 MW

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON