APPLICATION:  ATTENUATOR; SWITCHING

BREAKDOWN VOLTAGE-MIN:  50 V

CONFIGURATION:  SINGLE

DIODE CAPACITANCE-MAX:  0.32 PF

DIODE CAPACITANCE-NOM:  0.36 PF

DIODE ELEMENT MATERIAL:  SILICON

DIODE FORWARD RESISTANCE-MAX:  1.5 O

DIODE RES TEST CURRENT:  500 ΜA

DIODE RES TEST FREQUENCY:  100 MHZ

DIODE TYPE:  PIN DIODE

FREQUENCY BAND:  S BAND

JESD-30 CODE:  R-PDSO-F2

JESD-609 CODE:  E3

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  BAP63-02

MINORITY CARRIER LIFETIME-NOM:  310 NS

MOISTURE SENSITIVITY LEVEL:  NOT APPLICABLE

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  150 °C

OPERATING TEMPERATURE-MIN:  -65 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-F2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-79

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  2

POWER DISSIPATION (MAX):  715 MW

QUALIFICATION STATUS:  NOT QUALIFIED

REVERSE TEST VOLTAGE:  0 V

SUBCATEGORY:  PIN DIODES

SURFACE MOUNT:  YES

TECHNOLOGY:  POSITIVE-INTRINSIC-NEGATIVE

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  FLAT

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED