CAPACITANCE @ VR, F:  1.5PF @ 0V, 1MHZ

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  250MA (DC)

CURRENT - REVERSE LEAKAGE @ VR:  1ΜA @ 75V

DIODE TYPE:  STANDARD

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP USA INC.

MANUFACTURER PART NUMBER:  BAS216,115

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE - JUNCTION:  150°C (MAX)

PACKAGE / CASE:  SOD-110

PACKAGING:  REEL

REVERSE RECOVERY TIME (TRR):  4NS

SPEED:  FAST RECOVERY =< 500NS, > 200MA (IO)

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOD2

VOLTAGE - DC REVERSE (VR) (MAX):  75V

VOLTAGE - FORWARD (VF) (MAX) @ IF:  1.25V @ 150MA