CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - DRAIN (IDSS) @ VDS (VGS=0):  1MA @ 10V

CURRENT DRAIN (ID) - MAX:  10MA

DRAIN TO SOURCE VOLTAGE (VDSS):  25V

EXPANDED DESCRIPTION:  JFET N-CHANNEL 1MA @ 10V 250MW SURFACE MOUNT SOT-23 (TO-236AB)

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP USA INC.

MANUFACTURER PART NUMBER:  BFR31,215

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  250MW

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23 (TO-236AB)

VOLTAGE - CUTOFF (VGS OFF) @ ID:  2.5V @ 0.5NA

ALTERNATE PARTS:  BFR31,235