CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  850MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  2.1NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  83PF @ 24V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP USA INC.

MANUFACTURER PART NUMBER:  BSH103,215

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  540MW (TA)

RDS ON (MAX) @ ID, VGS:  400 MOHM @ 500MA, 4.5V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23 (TO-236AB)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  400MV @ 1MA (MIN)