CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  335MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  55V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  FETS - SINGLE

GATE CHARGE (QG) @ VGS:  1NC @ 8V

INPUT CAPACITANCE (CISS) @ VDS:  40PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  BSH111,215

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  830MW

RDS ON (MAX) @ ID, VGS:  4 OHM @ 500MA, 4.5V

SERIES:  TRENCHMOS?

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23 (TO-236AB)

VGS(TH) (MAX) @ ID:  1.3V @ 1MA