CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  173MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  50V

EXPANDED DESCRIPTION:  N-CHANNEL 50V 173MA (TA) 830MW (TC) SURFACE MOUNT TO-236AB (SOT23)

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  25PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP USA INC.

MANUFACTURER PART NUMBER:  BSN20,215

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  830MW (TC)

RDS ON (MAX) @ ID, VGS:  15 OHM @ 100MA, 10V

SERIES:  TRENCHMOS?

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  1V @ 1MA

ALTERNATE PARTS:  BSN20BKR