BRAND NAME:  NXP SEMICONDUCTOR

CASE CONNECTION:  COLLECTOR

COLLECTOR CURRENT-MAX (IC):  1 A

COLLECTOR-EMITTER VOLTAGE-MAX:  60 V

CONFIGURATION:  DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

DC CURRENT GAIN-MIN (HFE):  2000

JESD-30 CODE:  R-PDSO-G4

JESD-609 CODE:  E3

KEYWORDS:  9339 863 60115

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PACKAGE CODE:  SOT223

MANUFACTURER PART NUMBER:  BSP61,115

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-73

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  PNP

POWER DISSIPATION AMBIENT-MAX:  1.5 W

POWER DISSIPATION-MAX (ABS):  1.5 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON

TRANSITION FREQUENCY-NOM (FT):  200 MHZ

VCESAT-MAX:  1.3 V