CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  ZENER DIODE

DYNAMIC IMPEDANCE-MAX:  80 O

JEDEC-95 CODE:  TO-236AB

JESD-30 CODE:  R-PDSO-G3

JESD-609 CODE:  E3

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  BZX84-B30

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING TEMPERATURE-MAX:  150 °C

OPERATING TEMPERATURE-MIN:  -65 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  ROHS COMPLIANT, PLASTIC PACKAGE-3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SOT-23

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  3

POLARITY:  UNIDIRECTIONAL

POWER DISSIPATION (MAX):  250 MW

QUALIFICATION STATUS:  NOT QUALIFIED

REFERENCE VOLTAGE-NOM:  30 V

REVERSE CURRENT-MAX:  50 NA

SUBCATEGORY:  VOLTAGE REFERENCE DIODES

SURFACE MOUNT:  YES

TECHNOLOGY:  ZENER

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

VOLTAGE TEMP COEFF-MAX:  29.4 MV/°C

VOLTAGE TOL-MAX:  2 %

WORKING TEST CURRENT:  2 MA