CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  190MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 190MA (TA) 265MW (TA), 1.33W (TC) SURFACE MOUNT TO-236AB (SOT23)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  0.43NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  17PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  NX7002AK,215

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  265MW (TA), 1.33W (TC)

RDS ON (MAX) @ ID, VGS:  4.5 OHM @ 100MA, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.1V @ 250ΜA

CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  190MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  FETS - SINGLE

GATE CHARGE (QG) @ VGS:  0.43NC @ 4.5V

INPUT CAPACITANCE (CISS) @ VDS:  17PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  NX7002AK,215

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  265MW

RDS ON (MAX) @ ID, VGS:  4.5 OHM @ 100MA, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23 (TO-236AB)

VGS(TH) (MAX) @ ID:  2.1V @ 250ΜA