Electronic Component
PHD20N06T,118
N-CHANNEL 55V 18A (TC) 51W (TC) SURFACE MOUNT DPAKAvailability
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CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 18A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 55V
EXPANDED DESCRIPTION: N-CHANNEL 55V 18A (TC) 51W (TC) SURFACE MOUNT DPAK
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 11NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 422PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NEXPERIA USA INC.
MANUFACTURER PART NUMBER: PHD20N06T,118
MANUFACTURER STANDARD LEAD TIME: 12 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER DISSIPATION (MAX): 51W (TC)
RDS ON (MAX) @ ID, VGS: 77 MOHM @ 10A, 10V
SERIES: TRENCHMOS?
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: DPAK
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 4V @ 1MA
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 18A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 55V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 11NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 422PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NXP USA INC.
MANUFACTURER PART NUMBER: PHD20N06T,118
MANUFACTURER STANDARD LEAD TIME: 12 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER - MAX: 51W
RDS ON (MAX) @ ID, VGS: 77 MOHM @ 10A, 10V
SERIES: TRENCHMOS?
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: DPAK
VGS(TH) (MAX) @ ID: 4V @ 1MA






