CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.5A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 55V 2.5A (TA) 1.8W (TA), 8.3W (TC) SURFACE MOUNT SOT-223

DRAIN TO SOURCE VOLTAGE (VDSS):  55V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  4.5NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  330PF @ 25V

MANUFACTURER:  NXP USA INC.

MANUFACTURER PART NUMBER:  PHT6N06LT,135

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.8W (TA), 8.3W (TC)

RDS ON (MAX) @ ID, VGS:  150 MOHM @ 5A, 5V

SERIES:  TRENCHMOS?

SUPPLIER DEVICE PACKAGE:  SOT-223

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±13V

VGS(TH) (MAX) @ ID:  2V @ 1MA