CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.1A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  40V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  FETS - SINGLE

GATE CHARGE (QG) @ VGS:  3.6NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  170PF @ 20V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  PMV130ENEAR

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  460MW

RDS ON (MAX) @ ID, VGS:  120 MOHM @ 1.5A, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA