CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.9A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 100V 1.9A (TC) 280MW (TJ) SURFACE MOUNT TO-236AB (SOT23)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  7NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  330PF @ 20V

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  PMV213SN,215

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  280MW (TJ)

RDS ON (MAX) @ ID, VGS:  250 MOHM @ 500MA, 10V

SERIES:  TRENCHMOS?

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4V @ 1MA