CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  5.4A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  9.4NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  350PF @ 30V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP USA INC.

MANUFACTURER PART NUMBER:  PMV45EN,215

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  280MW (TJ)

RDS ON (MAX) @ ID, VGS:  42 MOHM @ 2A, 10V

SERIES:  TRENCHMOS?

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23 (TO-236AB)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2V @ 1MA