CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.2A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 3.2A (TA) 400MW (TA), 8.33W (TC) SURFACE MOUNT DFN1010D-3

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6.3NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  209PF @ 15V

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  PMXB56ENZ

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  3-XDFN EXPOSED PAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  400MW (TA), 8.33W (TC)

RDS ON (MAX) @ ID, VGS:  55 MOHM @ 3.2A, 10V

SUPPLIER DEVICE PACKAGE:  DFN1010D-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2V @ 250ΜA