CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  1ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  80 @ 5MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 NPN - PRE-BIASED (DUAL) 50V 100MA 230MHZ 480MW SURFACE MOUNT DFN1412-6

FREQUENCY - TRANSITION:  230MHZ

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  PRMH2Z

MANUFACTURER STANDARD LEAD TIME:  13 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  6-XFDFN EXPOSED PAD

PACKAGING:  REEL

POWER - MAX:  480MW

RESISTOR - BASE (R1):  47 KOHMS

RESISTOR - EMITTER BASE (R2):  47 KOHMS

SERIES:  AUTOMOTIVE, AEC-Q101

SUPPLIER DEVICE PACKAGE:  DFN1412-6

TRANSISTOR TYPE:  2 NPN - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  150MV @ 500ΜA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V