AVALANCHE ENERGY RATING (EAS):  407 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  40 V

DRAIN CURRENT-MAX (ID):  100 A

DRAIN-SOURCE ON RESISTANCE-MAX:  2.9 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PSSO-G2

JESD-609 CODE:  E3

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  PSMN2R8-40BS

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  260

POLARITY/CHANNEL TYPE:  N-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  797 A

REFERENCE STANDARD:  IEC-60134

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON