BREAKDOWN VOLTAGE-MAX:  18.5 V

BREAKDOWN VOLTAGE-MIN:  16.7 V

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  TRANS VOLTAGE SUPPRESSOR DIODE

JESD-30 CODE:  R-PDSO-F2

JESD-609 CODE:  E3

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  PTVS15VS1UTR

MOISTURE SENSITIVITY LEVEL:  1

NON-REP PEAK REV POWER DIS-MAX:  400 W

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  185 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-F2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  2

POLARITY:  UNIDIRECTIONAL

REP PK REVERSE VOLTAGE-MAX:  15 V

SURFACE MOUNT:  YES

TECHNOLOGY:  AVALANCHE

TERMINAL FINISH:  PURE TIN

TERMINAL FORM:  FLAT

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30