BASE PART NUMBER:  2N5401

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  600MA

CURRENT - COLLECTOR CUTOFF (MAX):  50NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  60 @ 10MA, 5V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 150V 600MA 300MHZ 625MW THROUGH HOLE TO-92-3

FREQUENCY - TRANSITION:  300MHZ

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  2N5401G

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA)

PACKAGING:  BULK PACK

POWER - MAX:  625MW

SUPPLIER DEVICE PACKAGE:  TO-92-3

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  500MV @ 5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  150V

ALTERNATE PARTS:  2N5401