BASE PART NUMBER:  2N5551

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  600MA

CURRENT - COLLECTOR CUTOFF (MAX):  50NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  80 @ 10MA, 5V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 160V 600MA 300MHZ 625MW THROUGH HOLE TO-92-3

FREQUENCY - TRANSITION:  300MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  2N5551G

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA)

PACKAGING:  BULK PACK

POWER - MAX:  625MW

STANDARD PACKAGE:  5,000

SUPPLIER DEVICE PACKAGE:  TO-92-3

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  200MV @ 5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  160V

ALTERNATE PARTS:  2N5551BU 2N5551