CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  25A

CURRENT - COLLECTOR CUTOFF (MAX):  2MA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  20 @ 10A, 4V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 80V 25A 4MHZ 200W THROUGH HOLE TO-3

FREQUENCY - TRANSITION:  4MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  2N5886G

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-204AA, TO-3

PACKAGING:  TRAY

POWER - MAX:  200W

STANDARD PACKAGE:  100

SUPPLIER DEVICE PACKAGE:  TO-3

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  4V @ 6.25A, 25A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  80V