BASE PART NUMBER:  2N6039

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  4A

CURRENT - COLLECTOR CUTOFF (MAX):  100ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  750 @ 2A, 3V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN - DARLINGTON 80V 4A 40W THROUGH HOLE TO-225AA

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  2N6039G

MANUFACTURER STANDARD LEAD TIME:  23 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-225AA, TO-126-3

PACKAGING:  BULK PACK

POWER - MAX:  40W

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  TO-225AA

TRANSISTOR TYPE:  NPN - DARLINGTON

VCE SATURATION (MAX) @ IB, IC:  3V @ 40MA, 4A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  80V

ALTERNATE PARTS:  BD679AG MJE803G BD679ASTU BD679AS