CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  200MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  FETS - SINGLE

INPUT CAPACITANCE (CISS) @ VDS:  60PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  2N7000G

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA)

PACKAGING:  BULK PACK

POWER - MAX:  350MW

RDS ON (MAX) @ ID, VGS:  5 OHM @ 500MA, 10V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  TO-92-3

VGS(TH) (MAX) @ ID:  3V @ 1MA

ALTERNATE PARTS:  2N7000 BS170P