CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  10A

CURRENT - COLLECTOR CUTOFF (MAX):  10ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  200 @ 1A, 2V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 50V 10A 130MHZ 950MW SURFACE MOUNT 2-TP-FA

FREQUENCY - TRANSITION:  130MHZ

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  2SA2169-TL-E

MANUFACTURER STANDARD LEAD TIME:  2 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER - MAX:  950MW

SUPPLIER DEVICE PACKAGE:  2-TP-FA

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  580MV @ 250MA, 5A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V