BASE PART NUMBER:  2SC5706

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  5A

CURRENT - COLLECTOR CUTOFF (MAX):  1ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  200 @ 500MA, 2V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 50V 5A 400MHZ 800MW THROUGH HOLE TP

FREQUENCY - TRANSITION:  400MHZ

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  2SC5706-E

MANUFACTURER STANDARD LEAD TIME:  2 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-251-3 SHORT LEADS, IPAK, TO-251AA

PACKAGING:  BULK PACK

POWER - MAX:  800MW

SUPPLIER DEVICE PACKAGE:  TP

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  240MV @ 100MA, 2A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

ALTERNATE PARTS:  2SD1803T-H 2SC5706-H 2SD1803T-E