CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - DRAIN (IDSS) @ VDS (VGS=0):  600ΜA @ 10V

CURRENT DRAIN (ID) - MAX:  10MA

DETAILED DESCRIPTION:  JFET N-CHANNEL 10MA 200MW SURFACE MOUNT 3-CP

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  2SK3666-2-TB-E

MANUFACTURER STANDARD LEAD TIME:  19 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  200MW

RESISTANCE - RDS(ON):  200 OHMS

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  3-CP

VOLTAGE - CUTOFF (VGS OFF) @ ID:  180MV @ 1ΜA