CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  150MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 150MA (TA) 250MW (TA) SURFACE MOUNT 3-CP

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.5V, 4V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  1.58NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  7PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  3LN01C-TB-H

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  250MW (TA)

RDS ON (MAX) @ ID, VGS:  3.7 OHM @ 80MA, 4V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  3-CP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±10V