BASE PART NUMBER:  BD139

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  1.5A

CURRENT - COLLECTOR CUTOFF (MAX):  100NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  40 @ 150MA, 2V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 80V 1.5A 1.25W THROUGH HOLE TO-225AA

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  BD139G

MANUFACTURER STANDARD LEAD TIME:  16 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-225AA, TO-126-3

PACKAGING:  BULK PACK

POWER - MAX:  1.25W

SUPPLIER DEVICE PACKAGE:  TO-225AA

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  500MV @ 50MA, 500MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  80V

ALTERNATE PARTS:  BD1396STU