AVALANCHE ENERGY RATING (EAS):  380 MJ

BRAND NAME:  ON SEMICONDUCTOR

CASE CONNECTION:  ISOLATED

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  75 V

DRAIN CURRENT-MAX (ID):  68 A

DRAIN-SOURCE ON RESISTANCE-MAX:  11.4 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-220AB

JESD-30 CODE:  R-PSFM-T3

KEYWORDS:  IGBTS & FETS;MOSFETS

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PACKAGE CODE:  221AT

MANUFACTURER PART NUMBER:  BMS3004-1E

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-PSFM-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  P-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  272 A

SURFACE MOUNT:  NO

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR ELEMENT MATERIAL:  SILICON