CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  250MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

EXPANDED DESCRIPTION:  N-CHANNEL 200V 250MA (TA) 350MW (TA) THROUGH HOLE TO-92-3

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  60PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  BS107ARL1G

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)

PACKAGING:  REEL

POWER DISSIPATION (MAX):  350MW (TA)

RDS ON (MAX) @ ID, VGS:  6.4 OHM @ 250MA, 10V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-92-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  3V @ 1MA

ALTERNATE PARTS:  ZVN4424A