CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  250MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  150PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  BS108ZL1G

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)

PACKAGING:  TAPE BOX

POWER DISSIPATION (MAX):  350MW (TA)

RDS ON (MAX) @ ID, VGS:  8 OHM @ 100MA, 2.8V

STANDARD PACKAGE:  2,000

SUPPLIER DEVICE PACKAGE:  TO-92-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  1.5V @ 1MA

ALTERNATE PARTS:  TN0620N3-G