BASE PART NUMBER:  BSP52

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  1A

CURRENT - COLLECTOR CUTOFF (MAX):  10ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  2000 @ 500MA, 10V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN - DARLINGTON 80V 1A 800MW SURFACE MOUNT SOT-223

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  BSP52T1G

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER - MAX:  800MW

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  SOT-223

TRANSISTOR TYPE:  NPN - DARLINGTON

VCE SATURATION (MAX) @ IB, IC:  1.3V @ 500ΜA, 500MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  80V

ALTERNATE PARTS:  BSP52T3G