CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  80 @ 5MA, 10V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 500MW SURFACE MOUNT SOT-563

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  EMD4DXV6T5G

MANUFACTURER STANDARD LEAD TIME:  2 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  500MW

RESISTOR - BASE (R1):  47 KOHMS, 10 KOHMS

RESISTOR - EMITTER BASE (R2):  47 KOHMS

SUPPLIER DEVICE PACKAGE:  SOT-563

TRANSISTOR TYPE:  1 NPN, 1 PNP - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  250MV @ 300ΜA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

ALTERNATE PARTS:  EMD4DXV6T1G